Investigation of FeN and TiN thin films properties for possible application in electronic devices

Autores

  • Julio Fernando Carvalho
  • Bartolomeu Cruz Viana Neto
  • José Weliton Nogueira Júnior
  • Heurison de Sousa e Silva
  • Wênio Fhará Alencar Borges
  • Rômulo Ribeiro Magalhães de Sousa

DOI:

https://doi.org/10.17563/rbav.v38i1.1124

Palavras-chave:

Plasma, Thin films, Cathodic cage.

Resumo

In the present work, thin films of FeN (Iron Nitride) and TiN (Titanium Nitride) were deposited in samples of laminated glass by cathodic cage deposition technique using stainless steel and titanium cages, respectively. Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Wettability and Electrical Conductivity techniques were used to characterize the samples. To obtain the electrical conductivity values, the electrical resistivity (also known as specific electrical resistance) was calculated. In this way, the lower the resistivity, the easier is the passage of an electric charge through the material. To this purpose, it was used the four-point probes method. FeN film presented hydrophobic surface, and TiN film hydrophilic surface. Both films were promising in electrical conductivity analysis. The results show promise applications in the electronic devices.

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Publicado

2019-05-06

Edição

Seção

Ciência e Tecnologia de Plasmas