We have deposited Er-doped GaAs films by resistive evaporation technique, which is used by the first time with this purpose. The doping is incorporated into the matrix in the ErCl3 form. Results of X-ray spectroscopy of energy dispersion (EDX) show the Er incorporation into the film and results of X-ray diffraction (XRD) indicate single-crystal domains, randomly distributed throughout the structure. Sample transmittance in the near infrared is maximum in the 1500-1600 nm range, coincident with the minimum absorption of optical fibers, and with the well known Er emission about 1540nm. Electrical characterization leads to striking results, since the resistance curve, in the dark, presents a peak about 65K.
