The AZ5214 positive tone photoresist could be used to obtain negative images by reversal image process in e-beam lithographic technology. Direct Write on silicon wafers were done to verify the capabilities of this process. We show that this technique could be well suited to obtain useful transferred pattern in microelectronics. Tests with e-beam ZBA-21 Jenoptik system in the laboratory indicated a remarkable advantage when the resist is used in mask making process for image reversal. Exposure time is significantly decreased when device or circuit layouts had a bright or dark dominant area.
