This work presents a suitable fabrication step to obtain deep etched structures on Si using Ni2Si as mask for alkaline solutions. In particular, V-grooves (60μm deep) and membranes (250μm deep) can be easily fabricated (2h and 8h, respectively), making Ni2Si an interesting alternative to replace SiO2 masks. The stoichiometric of the film was investigated by RBS resulting in a constant as Ni: Si=2:1.
