The interaction between the shallow acceptor boron and hydrogen in single crystal, polycrystalline and amorphous Si is investigated. Low-temperature SIMS depth -compositional profiles indicate a distinct interaction between the boron concentration and the hydrogen penetration in single crystals and at grain boundaries. The bonding of the H is identified to be directly the Si rather than to the B. This is confirmed by infrared measurements. Hydroxyl-group donding as part of the electrical neutralization of the B is also reported at oxygen-rich Si grain boundaries. No similar relationship between P concentration and H penetration is observed. In amorphous material, thc effect of the B-doping level has only a limitcd effect on the hydrogen penetration which seerns to be controlled instead by structural diffusion mechanisms.
