A new supporting surface analytical method, Volume-Indexed SIMS, which facilitates the the analysis of the compositional species at internalportions and inter-faces in semiconductor materials and devises, is introduced. The technique indexes the data for mass species, spatial location within a selected volume, and for level or concentration. The utility of this method is demonstration. forthe evaluation of the chemistry of impurity interactions at grain boundaries is polycrystalline silicon, including the behavior of hydrogen at these intercrystalline defects.
