The real contact resistivity parameter was investigated based on measurements using a cross-bridge Kelvin resistor for several recipes of thermal sintering. Using a computer program developed in MATLAB and based on a well-known three-dimensional multi-nodal resistor network, the Al/Si(N+P) and Al/TiSi2/Si(N+P) structures were analyzed after sintering at temperatures of 420 and 435 °C during 30 minutes in forming gas. For sintering at 420 °C, it was noteworthy to observe high contact resistivity for the Al/TiSi2/Si(N+P) structure and differences up to 55% between real and apparent contact resistivities. However, after sintering at 435 °C, the Al/TiSi2/Si(N+P) structure presented a low contact resistivity of 7.2 µ?cm2 while the Al/Si(N+P) structure, in spite of presenting the lowest value of contact resistivity, also showed prohibitive high values of reverse leakage current after sintering at 435°C or 450°C.
