The effects of ion bombardment upon electrical properties and reactions at Au-GaAs interfaces have been studies. Electrical data(I-V, C-V) showed that bombardment of (100)GaAs with 0.5 to 3keV Ar+ prior to Audeposition resulter in lower surface carrier concentrations and increase depletion distances irrespective of dopant concentration (~10 17 to 10 19 cm-3)or type (n-Sior Te- or p-Zn). These effects are consistent with Ar+ creation of deeplevel bandgap states. Ion bombardment cleaning of GaAs resultedin accelerated reaction rates btween Au and the substrate when atomic disorder remained, butannealin of bombardment damage resulted in an atomically clean, atomically orderer interface which was more stable during heat treatment. The presence of interfacial oxygen accelerated the reaction between Au and GaAs.
