PRESSURE BEHAVIOR ANALYSIS ON A HOLLOW CATHODE PLASMA ETCHING SYSTEM

Autores

  • Fernando Marques Freitas Instituti Tecnológico de Aeronáutica
  • Homero Santiago Maciel
  • Inácio Regiani
  • Gilberto Petraconi Filho

DOI:

https://doi.org/10.17563/rbav.v29i1-2.843

Palavras-chave:

Tecnologia de Vácuo, Plasma, Etching

Resumo

Important questions on a plasma etching system arises from gas flow issues. This article represents a first step to obtain a thorough understanding of the gas behaviour on a Hollow Cathode Plasma Etching system. According to this objective, the pressure performance within a Plasma chamber, and on a remote positions of the gas feed line were analysed. Experimental measurements were compared to the predictions originated from an analytic model. Excellent agreement between theoretical and experimental values was achieved.

Biografia do Autor

Fernando Marques Freitas, Instituti Tecnológico de Aeronáutica

Departamento de Física, Laboratório de Plasmas e Processos.

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Publicado

2011-04-03

Edição

Seção

Ciência e Tecnologia de Vácuo