Various possible applications have bccn reviewcd of thin— film transistor—matrix drivc liquid—crystal displays. Novel process technologies have been discussed aiming at high performance thin—film transistors on glass substrate. It has been concluded that the most promising deposition technology is of a low—temperature chemical—vapor-deposition method using higher silanes and nitrogen compounds. Good amorphous—silicon and silicon—nitride films can be deposited at temperatures of as low as 350°C. For on—chip peripheral circuits, an excimer—laser crystallization method seems the most promising, since high temperature can be applied to the semiconducting film while keeping the substrate at the room temperature. The mobility of as high as 380cm2/Vs has been achieved by this method.
